Semiconductor device and methods of manufacturing and operating the same
AssigneeSK hynix Inc.
InventorKeon Soo Shim
Life of this patent
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Abstract
A semiconductor device includes a memory cell array including a vertical channel layer, two or more selection transistors, and a plurality of memory cells formed along the vertical channel; a peripheral circuit suitable for programming the two or more selection transistors and the memory cells; and a control circuit suitable for controlling the peripheral circuit to decrease a pass voltage applied to one word line adjacent to two or more selection lines coupled to the respective selection transistors, during a program operation in which the peripheral circuit applies a program voltage to the two or more selection lines and applies the pass voltage to a plurality of word lines connected to the memory cells.
Claims7
A method of manufacturing a semiconductor device, the method comprising;
- forming a vertical channel layer on a semiconductor substrate;
- forming word lines spaced apart from each other along the vertical channel layer;
- forming a first select line over the word lines after forming the word lines, wherein the first select line has a first resistance and a first thickness;
- forming a second select line over the first select line, wherein the second select line has a second resistance less than the first resistance, and a second thickness greater than the first thickness.
A method of manufacturing a semiconductor device, the method comprising;
- forming a vertical channel layer on a semiconductor substrate;
- forming word lines spaced apart from each other along the vertical channel layer;
- forming a first select line over the word lines after forming the word lines, wherein the first select line has a first concentration of a P-type impurity;
- and
- forming a second select line over the first select line, wherein the second select line has a second concentration of the P-type impurity greater than the first concentration of the P-type impurity.
Dependencies are inferred from the claim text.