Semiconductor memory device

A semiconductor memory device, comprising:

• a semiconductor substrate;
• a plurality of first insulating layers and first conductive layers stacked alternately in a first direction above the semiconductor substrate;
• a first semiconductor layer extending in the first direction;
• and
• a memory layer disposed between one of the first insulating layers and the first semiconductor layer and between one of the first conductive layers and the first semiconductor layer, the memory layer including a charge accumulation layer and a second insulating layer, the second insulating layer being between the charge accumulation layer and the first semiconductor layer,
• the first semiconductor layer and the memory layer having a gap in which the first semiconductor layer and the second insulating layer are exposed, between one of the first insulating layers and the first semiconductor layer, and
• the first semiconductor layer and the memory layer being contacted each other, between one of the first conductive layers and the first semiconductor layer.