Integrated circuit device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-gun You, Gi-gwan Park
Life of this patent
Estimating the term…
Abstract
An integrated circuit (IC) device includes a first-fin-type active region, a second-fin-type active region, and an inter-region stepped portion. The first-fin-type active region protrudes from a substrate in a first region of the substrate and has a first width in a first direction. The second-fin-type active region protrudes from the substrate in a second region of the substrate and has a second width in the first direction. The second width is less than the first width. The inter-region stepped portion is formed at an interface between the first region and the second region on a bottom surface, which is a portion of the substrate between the first-fin-type active region and the second-fin-type active region.
Claims19
An integrated circuit (IC) device comprising:
- a first-fin-type active region protruding in a height direction from a substrate in a first region of the substrate, the first-fin-type active region having a first width in a first direction different from the height direction;
- a second-fin-type active region protruding in the height direction from the substrate in a second region of the substrate, the second-fin-type active region having a second width in the first direction, wherein the second width is less than the first width;
- and
- an inter-region stepped portion at an interface between the first region and the second region on a bottom surface, which is a portion of the substrate that continuously extends from the first-fin-type active region to the second-fin-type active region.
An integrated circuit (IC) device comprising:
- a substrate having a first region and a second region adjacent to each other;
- a plurality of first-fin-type active regions protruding in a height direction from the substrate in the first region and extending parallel to one another;
- a plurality of second-fin-type active regions protruding in the height direction from the substrate in the second region and extending parallel to one another, each second-fin-type active region having a smaller width than a width of any one of the plurality of first-fin-type active regions in a first direction that is different from the height direction;
- and
- an inter-region isolation region having an inter-region stepped portion at an interface between the first region and the second region on a bottom surface of the substrate that continuously extends from the plurality of first-fin-type active regions to the plurality of second-fin-type active regions.
An integrated circuit (IC) device comprising:
- first and second fin-type active regions protruding from adjacent first and second surfaces of a substrate, respectively, wherein the first and second fin-type active regions differ in width;
- a first stressor liner on the first fin-type active region that imparts a tensile stress thereon;
- and
- a second stressor liner on the second fin-type active region that imparts a compressive stress thereon,
- wherein the first and second surfaces of the substrate are non-coplanar and define an inter-region stepped portion in the substrate at an interface between the first surface and the second surface, and wherein an interface between the first and second stressor liners is aligned with the inter-region stepped portion in the substrate.
Dependencies are inferred from the claim text.