US 9,853,027 B1 · Methods of forming patterns, and apparatuses comprising FinFETs

Abstract

Some embodiments include a method of forming a pattern. A semiconductor substrate has first and second rows extending along a first direction, and which alternate with one another along a second direction. Each of the rows includes course regions that are to be included along patterned structures. The course regions within the first rows are staggered relative to the course regions within the second rows. The patterned structures comprise first segments which extend along a third direction, and comprise second segments which extend along a fourth direction different from the third direction. Patterned masking material is formed across the substrate to define a first pattern having the first segments of the patterned structures, and to define a second pattern having the second segments of the patterned structures. The patterned structures are formed within the first and second patterns defined by the patterned masking material. Some embodiments include apparatuses having finFETs.

Claims20

Dependent claims

A method of forming a pattern, comprising:

providing a semiconductor substrate having rows extending along a first direction;
the rows being spaced from one another along a second direction;
each row comprising course regions that are to be included along patterned structures extending generally along the second direction;
the rows being subdivided amongst first and second rows which alternate with one another along the second direction;
the course regions within the first rows being staggered relative to the course regions within the second rows;
the patterned structures comprising first segments extending along a third direction intermediate the first and second directions, and comprising second segments extending along a fourth direction intermediate the first and second directions and different from the third direction;
forming patterned masking material across the semiconductor substrate to define a first pattern comprising the first segments of the patterned structures, and to define a second pattern comprising the second segments of the patterned structures;
and
forming the patterned structures within the first and second patterns defined by the patterned masking material.

6 more elements

A method of forming a pattern, comprising:

providing a semiconductor substrate having rows extending along a first direction;
the rows being spaced from one another along a second direction;
each row comprising alternating first regions and second regions;
the first regions being course regions that are to be included along patterned structures extending generally along the second direction;
the rows being subdivided amongst first and second rows which alternate with one another along the second direction;
the course regions within the first rows being staggered relative to the course regions within the second rows;
forming blocking material segments that cover every other space between the first and second regions along the first and second rows;
forming a first patterned mask across the semiconductor substrate and the blocking material segments;
the first patterned mask defining a plurality of substantially linear first trenches extending along a third direction intermediate the first and second directions;
forming first segments of the patterned structures within the first trenches;
forming a second patterned mask across the semiconductor substrate, across the blocking material segments, and across the first segments of the patterned structures;
the second pattern patterned mask defining a plurality of substantially linear second trenches extending along a fourth direction intermediate the first and second directions and different from the third direction;
and
forming second segments of the patterned structures within the second trenches;
the first and second segments of the patterned structures connecting with one another to form the patterned structures;
each of said patterned structures extending in a zigzag manner across the first and rows along the second direction.

13 more elements

An apparatus, comprising:

a plurality of finFETs arranged in line in a first direction, wherein each of the plurality of finFETs comprises a first pedestal serving as a first source/drain region, a second pedestal serving as a second source/drain region and a trough defining a channel region between the first and second source/drain regions, wherein the first and second source/drain regions of each of the plurality of finFETs are disposed in line in a second direction that is substantially perpendicular to the first direction, wherein an arrangement in the second direction of the first and second source/drain region of each of even-numbered ones of the plurality of finFETs is reverse to an arrangement in the second direction of the first and second source/drain regions of each of odd-numbered ones of the plurality of finFETs such that the first source/drain region of each of the even-numbered ones of the plurality of finFETs is sandwiched in the first direction between the second source/drain regions of corresponding adjacent two of the odd-numbered ones of the plurality of finFETs;
and
a digit line formed in a zigzag pattern to electrically interconnect the first source/drain regions of the plurality of finFETs to each other.

Dependencies are inferred from the claim text.

Methods of forming patterns, and apparatuses comprising FinFETs

Life of this patent

Methods of forming patterns, and apparatuses comprising FinFETs

Life of this patent

Abstract

Claims20