FinFET device and fabrication method thereof
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorDe Yuan Xiao
Life of this patent
Estimating the term…
Abstract
A transistor device may include a substrate that has a well portion. The transistor device may further include a source member and a drain member. The transistor device may further include a fin bar. The fin bar may be formed of a first semiconductor material, may be disposed between the source member and the drain member, and may overlap the well portion. The transistor device may further include a fin layer. The fin layer may be formed of a second semiconductor material, may be disposed between the source member and the drain member, and may contact the fin bar.
Claims20
A transistor device comprising:
- a substrate having a first first-type well portion;
- a buffer layer having a second first-type well portion, wherein an intrinsic semiconductor material of the buffer layer is different from an intrinsic semiconductor material of the substrate, wherein the first first-type well portion is a first p-well portion, and wherein the second first-type well portion is a second p-well portion;
- a first source member;
- a first drain member;
- a first fin bar formed of a first semiconductor material, disposed between the first source member and the first drain member, and overlapping the first first-type well portion, wherein a semiconductor material of the first first-type well portion is different from the first semiconductor material, and wherein the second first-type well portion is positioned between the first fin bar and the first first-type well portion in a direction perpendicular to a surface of the substrate;
- and
- a first fin layer formed of a second semiconductor material, disposed between the first source member and the first drain member, and contacting the first fin bar.
A transistor device comprising:
- a substrate having a first-type well portion;
- a doped first source member;
- a first drain member;
- a first fin bar formed of a first semiconductor material, disposed between the doped first source member and the first drain member in a direction parallel to a surface of the substrate, and overlapping the first-type well portion;
- a first fin layer formed of a second semiconductor material, disposed between the doped first source member and the first drain member, and directly contacting the first fin bar, wherein the doped first source member directly contacts both the first fin bar and the first fin layer;
- and
- a buffer layer disposed between the first fin bar and the substrate in a direction perpendicular to the surface of the substrate,
- wherein the buffer layer is formed by SiGe, GaAs, or AlGaAs, and
- wherein the semiconductor substrate includes a Si(111) portion.
A method for fabricating a transistor device, the method comprising:
- forming a buffer layer on a substrate, wherein the substrate comprises a first-type well portion and an undoped portion, and wherein the first-type well portion is positioned between the undoped portion and the buffer layer in a direction perpendicular to the substrate;
- forming a first fin bar using a first semiconductor material such that the first fin bar overlaps the first-type well portion of the substrate, wherein a semiconductor material of the first-type well portion is different from the first semiconductor material, and wherein the buffer layer is positioned between the first-type well portion and the first fin bar in the direction perpendicular to the substrate;
- forming a first fin layer using a second semiconductor material such that the first fin layer contacts the first fin bar;
- forming a first source member such that the first source member contacts a first side of the first fin bar and a first side of the first fin layer;
- and
- forming a first drain member such that the first drain member contacts a second side of the first fin bar and a second side of the first fin layer.
Dependencies are inferred from the claim text.