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US 9,853,021 B1Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsKuan-Ti Wang, Ling-Chun Chou, Kun-Hsien Lee
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Abstract
A method for fabricating semiconductor device includes the steps of: forming a first fin-shaped structure on a substrate; forming a shallow trench isolation (STI) adjacent to the first fin-shaped structure; and forming a gate structure on the first fin-shaped structure and the STI. Preferably, the gate structure comprises a left portion and the right portion and the work functions in the left portion and the right portion are different.
Claims16
A method for fabricating semiconductor device, comprising:
- forming a first fin-shaped structure on a substrate;
- forming a shallow trench isolation (STI) adjacent to the first fin-shaped structure;
- and
- forming a gate structure on the first fin-shaped structure and the STI, wherein the gate structure comprises a left portion and the right portion and the work functions in the left portion and the right portion are different.
1 more element
A semiconductor device, comprising:
- a first fin-shaped structure on a substrate;
- a shallow trench isolation (STI) adjacent to the first fin-shaped structure;
- and
- a gate structure on the first fin-shaped structure and the STI, wherein the gate structure comprises a left portion and the right portion and the work functions in the left portion and the right portion are different.
1 more element
Dependencies are inferred from the claim text.