Optoelectronic semiconductor chip and optoelectronic component

An optoelectronic semiconductor chip comprising:

• a semiconductor layer sequence having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a pn junction, the active zone formed between the first semiconductor region and the second semiconductor region;
• a carrier, wherein the semiconductor layer sequence is arranged on the carrier;
• a first contact electrically connected to the first semiconductor region;
• a second contact electrically connected to the second semiconductor region, the second contact being different than the first contact;
• and
• a first capacitive electrical element connected in parallel with the pn junction, the first capacitive element being formed of a single first dielectric layer that is suitable for taking up charge in case of an overvoltage in a reverse direction of the pn junction,
• wherein the single first dielectric layer has a thickness between 1 nanometer and 1000 nanometers, inclusive, and
• wherein the single first dielectric layer is a layer selected from the group consisting essentially of hafnium nitride, hafnium oxynitride, hafnium silicon oxynitride, zirconium oxynitride, zirconium silicon oxynitride, tantalum oxide, barium strontium titanate, strontium titanate, hafnium oxide, aluminum oxide and zirconium oxide.