Semiconductor packages having through electrodes and methods of fabricating the same

A semiconductor device comprising:

• a first semiconductor package comprising:
• a first chip comprising:
• a first active layer provided on a first side of the first chip;
• and
• first through-electrodes;
• a second chip comprising:
• a second active layer provided on a second side of the second chip;
• and
• second through-electrodes, the first chip and the second chip being stacked and the first active layer facing the second active layer;
• and
• a mold layer disposed between the first chip and the second chip;
• and
• a second semiconductor package comprising:
• a third chip comprising:
• a third active layer provided on a third side of the third chip;
• and
• third through-electrodes;
• and
• a fourth chip comprising a fourth active layer provided on a fourth side of the fourth chip, the third chip and the fourth chip being stacked and the third active layer facing the fourth active layer;
• wherein a fifth side of the third chip, opposite to the third side of the third chip, is configured to face a sixth side of the second chip opposite to the second side of the second chip, wherein the semiconductor device further comprises a plurality of electrodes which connect the second through-electrodes and the third through-electrodes,
• wherein the first chip has a first width and the second chip has a second width that is longer than the first width, and
• wherein the fourth chip has a fourth width and the third chip has a third width that is longer than the fourth width.

A semiconductor device comprising:

• a first semiconductor package comprising:
• a first chip comprising:
• a first active layer provided on a first side of the first chip;
• and
• first through-electrodes;
• a second chip being stacked on the first chip and comprising:
• a second active layer provided on a second side of the second chip;
• and
• second through-electrodes;
• and
• a mold layer disposed between the first chip and the second chip;
• and
• a second semiconductor package comprising:
• a third chip comprising a third active layer provided on a third side of the third chip;
• and
• a fourth chip comprising a fourth active layer provided on a fourth side of the fourth chip, the fourth chip being stacked on the third chip;
• wherein a fifth side of the third chip, opposite to the third side of the third chip, is configured to face a sixth side of the second chip, opposite to the second side of the second chip,
• wherein the semiconductor device further comprises a plurality of electrodes which connect the second through electrodes and third through electrodes,
• wherein the first chip has a first width and the second chip has a second width that is longer than the first width, and
• wherein the fourth chip has a fourth width and the third chip as a third width that is longer than the fourth width.