Semiconductor device and method of manufacturing the same

A semiconductor device, comprising:

• a semiconductor substrate;
• a first insulating film formed over the semiconductor substrate;
• a pad formed over the first insulating film;
• a second insulating film formed over the first insulating film so as to cover the pad;
• and
• an opening formed in the second insulating film to expose a part of the pad,
• wherein the pad comprises a pad to which a copper wire is to be electrically coupled and which includes an Al-containing conductive film containing aluminum as a main component, and
• wherein, over the Al-containing conductive film in a region overlapping the opening in a plan view, a first laminated film including a first conductor film, and a second conductor film over the first conductor film is formed,
• wherein the second conductor film is in an uppermost layer of the first laminated film,
• wherein the copper wire is bonded to the second conductor film,
• wherein the first conductor film is a single-layer film or a laminated film including one or more layers of films selected from a group consisting of a titanium film, a titanium nitride film, a tantalum film, a tantalum nitride film, a tungsten film, a tungsten nitride film, a titanium-tungsten film, and a tantalum-tungsten film,
• wherein the second conductor film comprises a palladium film, and
• wherein a height from an upper surface of the Al-containing conductive film to an upper surface of the second conductor film in the opening is less than a height from the upper surface of the Al-containing conductive film to an upper surface of the second insulating film formed over the Al-containing conductive film.