Lateral high voltage integrated devices having trench insulation field plates and metal field plates
AssigneeSK hynix system ic Inc.
InventorSung Kun Park
Life of this patent
Estimating the term…
Abstract
A high voltage integrated device includes a source region and a drain region disposed in a semiconductor layer and spaced apart from each other, a drift region disposed in the semiconductor layer and surrounding the drain region, a channel region defined in the semiconductor layer and between the source region and the drift region, a trench insulation field plate disposed in the drift region, a recessed region provided in the trench isolation field plate, a metal field plate disposed over the trench insulation field plate, and filling the recessed region, a gate insulation layer provided over the channel region and extending over the drift region and over the trench insulation field plate, and a gate electrode disposed over the gate insulation layer.
Claims21
A high voltage integrated device comprising:
- a source region and a drain region disposed in a semiconductor layer and spaced apart from each other;
- a drift region disposed in the semiconductor layer and surrounding the drain region;
- a channel region defined in the semiconductor layer and between the source region and the drift region, wherein the drift region is located between the channel region and the drain region;
- a trench insulation field plate disposed in the drift region, the trench insulation field plate having a recessed region to be recessed from the top surface of the drift region;
- a metal field plate disposed on and embedded in the trench insulation field plate, and filling the recessed region of the trench insulation field plate, wherein a top surface of the metal field plate is coplanar with a top surface of a source contact plug and a drain contact plug, and wherein a bottom surface of the metal field plate is spaced apart from the bottom surface of the trench insulation field plate and is spaced apart from the bottom surface of the drift region;
- a gate insulation layer provided over the channel region and extending over the drift region and over the trench insulation field plate;
- and
- a gate electrode disposed over the gate insulation layer, wherein a side surface of the gate insulation layer and a side surface of the gate electrode directly contact a side surface of the metal field plate.
Dependencies are inferred from the claim text.