Anti-fuses with reduced programming voltages

A method of forming an anti-fuse, the method comprising:

• forming a first fin;
• forming a dielectric layer that embeds the first fin;
• forming a trench in the dielectric layer, wherein the trench is aligned with the first fin;
• oxidizing a section of the first fin through the trench to form an edge, a plurality of inclined surfaces that intersect at the edge, and an oxide layer covering the edge and the inclined surfaces;
• after the section is oxidized, recessing a top surface of the dielectric layer with an etching process such that the section projects above the top surface of the dielectric layer, wherein the etching process removes the oxide layer from the edge and the inclined surfaces of the first fin to define a first terminal;
• and
• covering the edge and the inclined surfaces of the first fin with a second terminal and an isolation dielectric layer, wherein the isolation dielectric layer is located between the edge and the inclined surfaces of the first fin and the second terminal.