Semiconductor devices with through electrodes and methods of fabricating the same

A semiconductor device, comprising;

• a semiconductor substrate having electrically active and electrically inactive surfaces facing each other;
• an interlayered insulating layer provided on the electrically active surface of the semiconductor substrate,
• a metal line provided in the interlayered insulating layer;
• a via hole vertically penetrating the semiconductor substrate from the electrically active surface to the electrically inactive surface;
• a through electrode filling the via hole and vertically extending from the electrically active surface to the electrically inactive surface;
• and
• a main via provided in the interlayered insulating layer that electrically connects the through electrode to the metal line,
• wherein the main via has a hollow ring-shaped cylindrical structure that vertically extends from the metal line to the through electrode and at least a portion of the main via is along a circumference of the via hole and overlaps at least a portion of the via hole, when viewed in a plan view.

A semiconductor device comprising:

• a substrate having electrically active and electrically inactive surfaces that face each other;
• a through electrode that vertically extends through the substrate from the electrically active surface to the electrically inactive surface and, in a horizontal plane, the through electrode has a first perimeter;
• and
• a first via on the electrically active surface of the substrate, the first via having an inner perimeter and an outer perimeter in the horizontal plane,
• wherein the outer perimeter of the first via is greater than and surrounds the first perimeter of the through electrode.