Through-body via formation techniques

A method of forming a through-body via (TBV) in a semiconductor layer consisting essentially of a semiconductor material, the method comprising:

• forming a polymer-based barrier layer consisting essentially of one or more polymer materials within the semiconductor layer;
• forming an electrically conductive seed layer within an interior region bounded by the polymer-based barrier layer;
• and
• forming an electrically conductive interconnect within an interior region bounded by the seed layer, such that the one or more polymer materials is in direct contact with the semiconductor material, and the one or more polymer materials is also in direct contact with the electrically conductive seed layer.

An integrated circuit comprising:

• a first semiconductor die;
• and
• a second semiconductor die consisting essentially of a semiconductor material, the second semiconductor die electronically coupled with the first semiconductor die by a through-body via (TBV) formed within the second semiconductor die, the TBV comprising:
• an electrically conductive via consisting essentially of one or more metal materials, the electrically conductive via extending through the second semiconductor die from an upper surface thereof to an opposing lower surface thereof;
• and
• a barrier layer consisting essentially of one or more polymer materials between the electrically conductive via and the second semiconductor die, wherein the one or more polymer materials include at least one of polyimide, parylene, benzocyclobutene (BCB), polypropylene carbonate (PPC), and/or a combination of any one or more thereof, such that the one or more polymer materials is in direct contact with the semiconductor material, and the one or more polymer materials is also in direct contact with the one or more metal materials.