Semiconductor memory device and method for manufacturing the same

A semiconductor memory device comprising:

• a substrate;
• a stacked body provided on the substrate, and including a plurality of electrode films stacked separately from each other;
• and
• a plurality of columnar parts provided in the stacked body, and each including, a semiconductor pillar extending in a stacking direction of the stacked body, and a charge storage film provided between the semiconductor pillar and the stacked body,
• the plurality of electrode films including a plurality of first electrode films provided in upper layers of the stacked body and a plurality of second electrode films provided in lower layers of the stacked body,
• at least one of the first electrode films having, a first thickness, which is a smallest thickness of thicknesses of the first electrode films,
• at least one of the second electrode films having a second thickness, which is a largest thickness of thicknesses of the second electrode films,
• the first thickness being, thicker than the second thickness, and
• in a case of defining the first thickness as L1a, a width of the columnar part disposed in the first electrode film as W1a, a distance between centers of the columnar parts adjacent to each other disposed in the first electrode film as W2a, the second thickness as L2a, a width of the columnar part disposed in the second electrode film as W2a, and a distance between centers of the columnar parts adjacent to each other disposed in the second electrode film as d2a, the following two formulas are fulfilled,
• d1a−W1a<L1a
• d2a−W2a≧L2a.