Manufacturing method for semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKengo Akimoto, Yukinori Shima
Life of this patent
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Abstract
A semiconductor device including an oxide conductor with high conductivity and high transmittance is provided. A manufacturing method for a semiconductor device includes the steps of: forming an oxide semiconductor over a first insulator; forming a second insulator over the first insulator and the oxide semiconductor; forming a first conductor over the second insulator; forming an etching mask over the first conductor; forming a second conductor including a region overlapping with the oxide semiconductor by etching the first conductor with use of the etching mask as a mask; removing the etching mask; and performing heat treatment after forming a hydrogen-containing layer over the second insulator and the second conductor.
Claims32
A method for manufacturing a semiconductor device, comprising:
- forming an oxide semiconductor over a first insulator;
- forming a second insulator over the first insulator and the oxide semiconductor;
- forming a first conductor over the second insulator;
- forming a second conductor including a region overlapping with the oxide semiconductor by processing the first conductor;
- and
- performing heat treatment after forming a hydrogen-containing layer over the second insulator and the second conductor.
A method for manufacturing a semiconductor device, comprising:
- forming a first conductor over a first insulator;
- forming a second insulator over the first insulator and the first conductor;
- forming a first oxide semiconductor and a second oxide semiconductor over the second insulator;
- forming a third insulator over the second insulator and the first oxide semiconductor;
- forming a fourth insulator over the second oxide semiconductor and the third insulator;
- and
- performing heat treatment after forming a hydrogen-containing layer over the fourth insulator.
A method for manufacturing a semiconductor device, comprising:
- forming an oxide semiconductor;
- forming an insulator over the oxide semiconductor;
- forming a conductor over the insulator, the conductor including a region overlapping with the oxide semiconductor;
- forming a hydrogen-containing layer over the insulator and the conductor;
- and
- performing heat treatment on the hydrogen-containing layer at a temperature in a range of 150° C. or higher and 450° C. or lower.
A method for manufacturing a semiconductor device, comprising:
- forming a first conductor;
- forming a first insulator over the first conductor;
- forming a first oxide semiconductor and a second oxide semiconductor over the first insulator;
- forming a second insulator over the first insulator and the first oxide semiconductor;
- forming a third insulator over the second oxide semiconductor and the second insulator;
- forming a hydrogen-containing layer over the third insulator;
- and
- performing heat treatment on the hydrogen-containing layer at a temperature in a range of 150° C. or higher and 450° C. or lower.
Dependencies are inferred from the claim text.