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US 9,852,925 B2Granted
Method of manufacturing semiconductor device
AssigneeToyoda Gosei Co., Ltd.
InventorsTakahiro Fujii, Masayoshi Kosaki, Takaki Niwa
Life of this patent
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Abstract
A technique of reducing the manufacturing cost of a semiconductor device is provided, There is provided a method of manufacturing a semiconductor device comprising an ion implantation process of implanting at least one of magnesium and beryllium by ion implantation into a first semiconductor layer that is mainly formed from a group III nitride; and a heating process of heating the first semiconductor layer in an atmosphere that includes an anneal gas of at least one of magnesium and beryllium, after the ion implantation process.
Claims10
A method of manufacturing a semiconductor device, comprising:
- an ion implantation process of implanting at least one of magnesium and beryllium by ion implantation into a first semiconductor layer that is mainly formed from a group III nitride;
- and
- a heating process of heating the first semiconductor layer in an atmosphere that includes an anneal gas of at least one of magnesium and beryllium, after the ion implantation process.
Dependencies are inferred from the claim text.