Mask etch for patterning
AssigneeApplied Materials, Inc.
InventorsGene Lee, Lucy Chen
Life of this patent
Estimating the term…
Abstract
A hard mask layer is deposited on a feature layer over a substrate. The hard mask layer comprises an organic mask layer. An opening in the organic mask layer is formed using a first gas comprising a halogen element at a first temperature greater than a room temperature to expose a portion of the feature layer. In one embodiment, a gas comprising a halogen element is supplied to a chamber. An organic mask layer on an insulating layer over a substrate is etched using the halogen element at a first temperature to form an opening to expose a portion of the insulating layer.
Claims12
A method to manufacture an electronic device, comprising:
- depositing a first hard mask layer on a feature layer over a substrate, the first hard mask layer comprising an organic mask layer;
- forming an opening in the first hard mask layer using a first plasma comprising a halogen element and an oxygen element at a first temperature greater than a room temperature to expose a portion of the feature layer, the opening having a profile and a critical diameter, wherein forming the opening includes a first etching operation, a second etching operation and a third etching operation
- to maintain the profile, the critical diameter, or the profile and the critical diameter of the opening, wherein a gas flow rate to provide the oxygen element at the first etching operation is greater than the gas flow rate to provide the oxygen element at the second etching operation that is greater than the gas flow rate to provide the oxygen element at the third etching operation;
- and
- increasing the first temperature to tune at least one of the profile and the critical diameter.
A method to manufacture an electronic device comprising:
- supplying a first gas to a chamber, the first gas to provide a first plasma comprising a halogen element and an oxygen element;
- etching an organic mask layer comprising a dopant on an insulating layer over a substrate using the halogen element and the oxygen element at a first temperature to form an opening to expose a portion of the insulating layer, the opening having a profile and a critical diameter, wherein etching the organic mask layer includes a first etching operation, a second etching operation and a third etching operation to maintain the profile, the critical diameter, or the profile and the critical diameter, wherein a flow rate of the first gas to provide the oxygen element at the first etching operation is greater than the flow rate of the first gas to provide the oxygen element at the second etching operation that is greater than the flow rate of the first gas to provide the oxygen element at the third etching operation;
- and
- increasing the first temperature to tune at least one of the profile and the critical diameter, wherein the first temperature is greater than a room temperature.
Dependencies are inferred from the claim text.