Mask structure forming method and film forming apparatus
AssigneeTokyo Electron Limited
InventorsMasahisa Watanabe, Hiroshi Kubota
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Abstract
There is provided a method of forming an etching-purpose mask structure on an insulating film containing silicon and oxygen, which includes: forming an intermediate film containing silicon, carbon, nitrogen and hydrogen as main components by supplying a first process gas onto the insulating film formed on a substrate; and subsequently, forming a tungsten film by supplying a second process gas containing a compound of tungsten to the substrate to replace some of silicon constituting the intermediate film with tungsten.
Claims7
A method of forming an etching-purpose mask structure on an insulating film containing silicon and oxygen, comprising:
- forming an intermediate film containing silicon, carbon, nitrogen and hydrogen as main components by supplying a first process gas onto the insulating film formed on a substrate;
- and
- subsequently, forming a tungsten film by supplying a second process gas containing a compound of tungsten to the substrate to replace some of silicon constituting the intermediate film with tungsten.
A film forming apparatus of performing a film forming process on a substrate placed in a vacuum container, comprising:
- a heating mechanism configured to heat the substrate placed in the vacuum container;
- a first gas supply part configured to supply a first process gas into the vacuum container to form an intermediate film containing silicon, carbon, nitrogen and hydrogen as main components on the substrate;
- a second gas supply part configured to supply a second process gas containing a compound of tungsten into the vacuum container;
- a pressure regulating part configured to regulate an internal pressure of the vacuum container;
- and
- a control part configured to control the heating mechanism, the first gas supply part, the second gas supply part and the pressure regulating part so as to perform a first step of forming the intermediate film by supplying the first process gas onto an insulating film formed on the substrate and subsequently, a second step of forming a tungsten film by supplying a process gas containing a compound of tungsten to replace some of silicon constituting the intermediate film with tungsten.
Dependencies are inferred from the claim text.