Back to results
US 9,852,904 B2Granted
Method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hideomi Suzawa, Shinya Sasagawa, Tetsuhiro Tanaka
Life of this patent
Estimating the term…
Abstract
In a semiconductor device in which a channel formation region is included in an oxide semiconductor layer, an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer are used to supply oxygen of the gate insulating film, which is introduced by an ion implantation method, to the oxide semiconductor layer.
Claims8
A method for manufacturing a semiconductor device, including the steps of:
- forming an oxide semiconductor layer;
- forming a first conductive film over the oxide semiconductor layer;
- forming a first source electrode layer and a first drain electrode layer being in contact with the oxide semiconductor layer by a first etching that etches the first conductive film;
- forming a second conductive film over the oxide semiconductor layer, the first source electrode layer, and the first drain electrode layer;
- forming a resist mask over the second conductive film by performing electron beam exposure;
- forming a second source electrode layer and a second drain electrode layer being in contact with the oxide semiconductor layer by a second etching that etches the second conductive film using the resist mask;
- forming a gate insulating film over the oxide semiconductor layer, the second source electrode layer, and the second drain electrode layer;
- forming a gate electrode over the gate insulating film;
- forming a protective insulating film over the gate electrode;
- introducing oxygen into the gate insulating film through the protective insulating film;
- and
- supplying the oxygen of the gate insulating film to the oxide semiconductor layer.
9 more elements
Dependencies are inferred from the claim text.