System and method in indium-gallium-arsenide channel height control for sub 7nm FinFET

A method, comprising:

• breaking oxygen bonds in an oxide layer;
• converting the oxide layer to an evaporable layer at a first temperature;
• evaporating the evaporable layer at a second temperature higher than the first temperature to expose a surface of a group III-V semiconductor material;
• and
• oxidizing the surface of the group III-V semiconductor material.

A method, comprising:

• a) exposing an oxide layer to a first plasma;
• b) exposing the oxide layer to a second plasma to convert the oxide layer to an evaporable layer at a first temperature;
• c) evaporating the evaporable layer at a second temperature higher than the first temperature to expose a surface of a group III-V semiconductor material;
• d) exposing the surface of the group III-V semiconductor material to an oxygen containing gas;
• e) iteratively repeating at least a-c;
• and
• f) forming a channel material on the substrate.