Material deposition for high aspect ratio structures
AssigneeApplied Materials, Inc.
InventorsJun Xue, Ludovic Godet, Martin A. Hilkene, Matthew D. Scotney-Castle
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Abstract
Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall.
Claims14
A method to manufacture an electronic device comprising:
- supplying ion species to a workpiece comprising a pattern layer comprising a trench on a substrate, the trench comprising a bottom, a top, a first sidewall and a second sidewall between the top and the bottom, and a gap between the first sidewall and the second sidewall;
- and
- filling the gap from the bottom up to the top by a material layer comprising carbon using an implantation process of the ion species.
A method to manufacture an electronic device comprising:
- supplying ion species to a workpiece comprising a plurality of trenches between a plurality of features on an etch stop layer on a substrate, wherein at least one of the plurality of trenches comprises a bottom, a top, a first sidewall and a second sidewall between the top and the bottom, and a gap between the first sidewall and the second sidewall;
- filling the gap from the bottom up to the top by a material layer comprising carbon using an implantation process of the ion species.
Dependencies are inferred from the claim text.