Charged particle beam writing method, and charged particle beam writing apparatus

A charged particle beam writing apparatus comprising:

• processing circuitry that is programmed to perform the function of
• a first acquisition processing part acquiring a pair of a reference dose and a backscatter coefficient for correcting a proximity effect in a case of using a charged particle beam whose shot position is moved after a first settling time has passed,
• a second acquisition part acquiring a first relation between a temperature rise amount and a critical dimension variation amount of a pattern formed using a charged particle beam, whose shot position is moved after a second settling time shorter than the first settling time has passed, and whose dose for correcting the proximity effect is acquired using the backscatter coefficient and the reference dose of the pair acquired,
• a temperature correction parameter calculation processing part calculating a temperature correction parameter depending on a temperature rise amount, for correcting a dose, by using the first relation, and a second relation on a dose and a pattern critical dimension formed by the charged particle beam whose shot position is moved after the first settling time has passed, and
• a dose calculation processing part calculating a dose of beam irradiation by using the reference dose and a dose coefficient for correcting the proximity effect, obtained from the backscatter coefficient of the pair acquired, and the temperature correction parameter;
• and
• a writing mechanism configured to include a stage for mounting a target object thereon, an emission source for emitting a charged particle beam, and a deflector for deflecting the charged particle beam, and to write a pattern on the target object with the charged particle beam of the dose while shifting a shot position after the second settling time has passed.