Multi charged particle beam writing apparatus and multi charged particle beam writing method
AssigneeNuFlare Technology, Inc.
InventorsYasuo Kato, Hideo Inoue, Hiroshi Matsumoto, Ryoh Kawana
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AssigneeNuFlare Technology, Inc.
InventorsYasuo Kato, Hideo Inoue, Hiroshi Matsumoto, Ryoh Kawana
Estimating the term…
In one embodiment, a multi charged particle beam writing apparatus includes processing circuitry that is programmed to perform the function of a data region determination part determining a data region based on boundaries of pixels obtained by dividing a writing area of a substrate into mesh-shaped regions, an irradiation range of multiple charged particle beams, and boundaries of stripe segments obtained by dividing the writing area into segments having a predetermined width such that the segments are arranged in a predetermined direction, a deflection coordinate adjustment part adjusting deflection coordinates of the multiple charged particle beams such that the boundaries of the pixels are mapped to a boundary of the irradiation range, and a correction part calculating a corrected dose of each beam of the multiple charged particle beams by distributing, based on a positional relationship between the beam and pixels in the data region, a dose of the beam corresponding to a pixel in the data region calculated based on write data to one or more beams, and adding doses distributed to the beam, and a writing mechanism, including a charged particle beam source, a deflector, and a stage on which a target object is placed, and the writing mechanism deflecting the multiple charged particle beams based on the adjusted deflection coordinates and applying the beams each having the corrected dose to write a pattern.
A multi charged particle beam writing apparatus comprising:
A multi charged particle beam writing method comprising:
Dependencies are inferred from the claim text.
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Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical…:…
Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical…:…
Details: means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
Electron-beam or ion-beam tubes for localised treatment of objects: controlling tubes by information coming from the objects or from the beam,…
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This application is based upon and claims benefit of priority from the Japanese Patent Application No. 2016-22040, filed on Feb. 8, 2016, and the Japanese Patent Application No. 2016-83002, filed on Apr. 18, 2016, the entire contents of which are incorporated herein by reference.
The present invention relates to a multi charged particle beam writing apparatus and a multi charged particle beam writing method.
As LSI circuits are increasing in density, circuit line widths of semiconductor devices are becoming finer. Examples of methods of producing an exposure mask (also called a reticle, which is used in a stepper or a scanner) to be used to form a circuit pattern for such a semiconductor device include an electron beam writing technique with high resolution.
FIG. 1 is a schematic diagram illustrating the configuration of a writing apparatus according to an embodiment of the present invention.
FIGS. 2A and 2B are diagrams each illustrating an exemplary configuration of an aperture member.
FIG. 3 is a diagram explaining an exemplary writing operation.
In one embodiment, a multi charged particle beam writing apparatus includes processing circuitry that is programmed to perform the function of a data region determination part determining a data region based on boundaries of pixels obtained by dividing a writing area of a substrate into mesh-shaped regions, an irradiation range of multiple charged particle beams, and boundaries of stripe segments obtained by dividing the writing area into segments having a predetermined width such that the segments are arranged in a predetermined direction, a deflection coordinate adjustment part adjusting deflection coordinates of the multiple charged particle beams such that the boundaries of the pixels are mapped to a boundary of the irradiation range, and a correction part calculating a corrected dose of each beam of the multiple charged particle beams by distributing, based on a positional relationship between the beam and pixels in the data region, a dose of the beam corresponding to a pixel in the data region calculated based on write data to one or more beams, and adding doses distributed to the beam, and a writing mechanism, including a charged particle beam source, a deflector, and a stage on which a target object is placed, and the writing mechanism deflecting the multiple charged particle beams based on the adjusted deflection coordinates and applying the beams each having the corrected dose to write a pattern.
In an embodiment, a configuration using an electron beam as an example of a charged particle beam will be described. The charged particle beam is not limited to the electron beam. For example, a beam including charged particles, such as an ion beam, may be used.
FIG. 1 is a schematic diagram illustrating the configuration of a writing apparatus according to the embodiment. In FIG. 1, a writing apparatus 100 includes a writing unit 150 and a control unit 160. The writing apparatus 100 is an example of a multi charged particle beam writing apparatus.