Metal nitride material for thermistor, method for producing same, and film thermistor sensor

#This application is the national phase under 35 U.S.C. §371 of PCT International Application No. PCT/JP2013/055601, filed Feb. 21, 2013, which claims the benefit of Japanese Patent Application No. 2012-041967 filed Feb. 28, 2012, the entire contents of the aforementioned applications are hereby incorporated herein by reference.

#Field of the Invention

#The present invention relates to a metal nitride material for a thermistor, which can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor.

#FIG. 1 is a Ti—Al—(N+O)-based ternary phase diagram illustrating the composition range of a metal nitride material for a thermistor according to one embodiment of a metal nitride material for a thermistor, a method for producing the same, and a film type thermistor sensor of the present invention.

#FIG. 2 is a perspective view illustrating a film type thermistor sensor according to the present embodiment.

#FIG. 3 is a perspective view illustrating a method for producing a film type thermistor sensor in the order of steps according to the present embodiment.

#Hereinafter, a description will be given of a metal nitride material for a thermistor, a method for producing the same, and a film type thermistor sensor according to one embodiment of the present invention with reference to FIGS. 1 to 3. In the drawings used in the following description, the scale of each component is changed as appropriate so that each component is recognizable or is readily recognized.

#The metal nitride material for a thermistor of the present embodiment is a metal nitride material for a thermistor consisting of a metal nitride represented by the general formula: TixAly(N1-wOw)z (where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. Specifically, the metal nitride material for a thermistor has a composition within the region enclosed by the points A, B, C, and D in the Ti—Al—(N+O)-based ternary phase diagram as shown in FIG. 1, wherein the crystal phase thereof is a wurtzite-type metal nitride.

#Note that the composition ratios (x, y, z) at the points A, B, C, and D are A (x, y, z=13.5, 31.5, 55), B (x, y, z=2.25, 42.75, 55), C (x, y, z=2.75, 52.25, 45), and D (x, y, z=16.5, 38.5, 45), respectively.