Dummy word line control scheme for non-volatile memory

A non-volatile storage apparatus, comprising:

• a plurality of non-volatile memory cells including a data memory cell and a dummy memory cell, wherein the data memory cell and the dummy memory cell are part of a common NAND string;
• a select gate, wherein the select gate is part of the common NAND string and the dummy memory cell is located on the common NAND string between the data memory cell and the select gate;
• and
• one or more control circuits in communication with the plurality of non-volatile memory cells, the one or more control circuits configured to perform a memory operation on the data memory cell, the one or more control circuits configured to apply a gate voltage based on temperature to the dummy memory cell as part of the memory operation, wherein:
• the one or more control circuits configured to apply the gate voltage to the dummy memory cell as part of the memory operation based on temperature and number of word lines already programmed;
• the memory operation is a programming operation for the data memory cell;
• the data memory cell and the dummy memory cell are in a block;
• the one or more control circuits are configured to apply a higher gate voltage to the dummy memory cell if more than a predetermined number of word lines of the block are programmed;
• and
• the one or more control circuits are configured to apply a lower gate voltage to the dummy memory cell if less than the predetermined number of word lines of the block are programmed.

A method for operating non-volatile storage, comprising:

• changing threshold voltage of non-volatile data memory cells connected to a first word line;
• determining a word line voltage adjustment based on temperature;
• and
• applying a voltage based on the word line voltage adjustment to a dummy word line connected to dummy memory cells during the changing threshold voltage of the data memory cells connected to the first word line, wherein the data memory cells and the dummy memory cells are arranged as one or more NAND strings, in each of which one of the dummy memory cells is located between one of the data memory cells and a select gate, wherein:
• the data memory cells, the dummy memory cells, the first word line and the dummy word line are in a block;
• the dummy word line is adjacent a select line for the block;
• the changing threshold voltage includes erasing the block;
• and
• the applying the voltage based on the word line voltage adjustment to the dummy word line includes applying a higher voltage to the dummy word line in response to a detected higher temperature and applying a lower voltage to the dummy word line in response to a detected lower temperature.