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US 9,852,802 B2Granted
Memory system with multiple programming modes
AssigneeSamsung Electronics Co., Ltd.
InventorSang-Wook Yoo
Life of this patent
Estimating the term…
Abstract
A memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device has a first program mode and a second program mode. The second program mode programs data to have a larger read margin than the first program mode. The memory controller controls the nonvolatile memory device to program the data according to the second program mode for a read reclaim operation.
Claims17
A memory system comprising:
- a nonvolatile memory device having a first program mode and a second program mode, wherein the second program mode programs data to have a larger read margin than the first program mode;
- and
- a memory controller that controls the nonvolatile memory device to program the data according to the second program mode for a read reclaim operation, wherein:
- each of the first program mode and the second program mode programs the data through multi-stage programming, and
- each ith stage of the multi-stage programming, where i is an integer greater than zero, is the same for both the first program mode and the second program mode, but the second program mode has more stages of the multi-stage programming than does the first program mode.
2 more elements
A memory system comprising:
- a nonvolatile memory device having a normal program mode and a reclaim program mode, wherein the reclaim program mode programs data to have a larger read margin than the normal program mode;
- and
- a memory controller that detects error bits of read data readout from the nonvolatile memory device and controls the nonvolatile memory device to program the read data into a free block of the nonvolatile memory device in the reclaim program mode when a number of detected error bits exceeds a reference value, wherein:
- each of the normal program mode and the reclaim program mode programs the data through multi-stage programming, and
- each ith stage of the multi-stage programming, where i is an integer greater than zero, is the same for both the normal program mode and the reclaim program mode, but the reclaim program mode has more stages of the multi-stage programming than does the normal program mode.
2 more elements
A memory system comprising:
- a nonvolatile memory device comprising a plurality of memory cells;
- and
- a memory controller that controls the nonvolatile memory device to program data within selected ones of the memory cells of the nonvolatile memory device according to each of a general programming mode and a read reclaim mode, wherein data programmed according to the read reclaim mode has a narrower voltage threshold distribution within the selected memory cells than data programmed according to the general programming mode, wherein:
- each of the general programming mode and the read reclaim mode programs the data through multi-stage programming, and
- each stage of the multi-stage programming is the same for both the general programming mode and the read reclaim mode, except a last stage of the multi-stage programming.
2 more elements
Dependencies are inferred from the claim text.