Methods of operating nonvolatile memory devices, and memory systems including nonvolatile memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-Ku Kang, Sang-Yong Yoon, Joon-Suc Jang
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Abstract
A method of operating a nonvolatile memory device includes performing a first memory operation on a first memory block of a plurality of memory blocks and a curing operation on a portion of the first memory block when a status signal indicates a ready state of the nonvolatile memory device during an interval equal to or greater than a reference interval after the first memory operation is completed. The nonvolatile memory device includes the plurality of memory blocks, each memory block including a plurality of vertical strings extending in a vertical direction with respect to a substrate.
Claims19
A method of operating a nonvolatile memory device, wherein the nonvolatile memory device comprises a plurality of memory blocks, each memory block including a plurality of vertical strings extending in a vertical direction with respect to a substrate, the method comprising:
- performing a first memory operation on a first memory block of the memory blocks;
- and
- performing a curing operation on a portion of the first memory block when a status signal indicates a ready state of the nonvolatile memory device during an interval equal to or greater than a reference interval after the first memory operation is completed.
A nonvolatile memory device, comprising:
- a memory cell array including a plurality of memory blocks, each memory block including a plurality of vertical strings extending in a vertical direction with respect to a substrate;
- a voltage generator configured to generate word-line voltages in response to a control signal;
- an address decoder configured to provide the word-line voltages to the memory cell array in response to an address signal;
- and
- a control circuit configured to control the voltage generator and the address decoder such that a first memory operation is performed on a first memory block of the memory blocks and a curing operation is performed on a portion of the first memory block in response to a command from a memory controller when a status signal indicates a ready state of the nonvolatile memory device during an interval equal to or greater than a reference interval after the first memory operation is completed.
A nonvolatile memory device, comprising:
- a memory cell array including a plurality of memory blocks, wherein a first memory block of the memory blocks includes a plurality of strings, and wherein a first string of the plurality of strings includes a plurality of transistors stacked in a direction substantially perpendicular to a substrate;
- and
- a control circuit configured to instruct a curing operation to be performed on the first memory block, wherein the curing operation is performed after the nonvolatile memory device has been in a ready state for a predetermined time after a first memory operation performed on the first memory block ends,
- wherein a status signal indicated the ready state, and after the status signal has been in the ready state for more than the predetermined time, the control circuit is provided with a command and an address of the first memory block, and the curing operation is performed on a region of the first memory block designated by the address.
Dependencies are inferred from the claim text.