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US 9,852,794 B2Granted
Systems, methods and devices for programming a multilevel resistive memory cell
AssigneeMicron Technology, Inc.
InventorsPaolo Fantini, Massimo Ferro
Life of this patent
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Abstract
Embodiments disclosed herein may relate to programming a multi-level memory cell with programming pulse sequences that comprise forward-biased and reverse-biased programming pulses.
Claims20
A method of programming a memory device, comprising:
- applying one or more forward-biased electrical pulses to a memory cell;
- and
- programming the memory cell from an intermediate programming state to a set programming state based at least in part on applying the one or more forward-biased electrical pulses, wherein the one or more forward-biased electrical pulses ramp in a first sequence.
A memory device, comprising:
- a memory array comprising a plurality of memory cells;
- and
- a control unit configured to program one or more memory cells of the plurality of memory cells from an intermediate programming state to a set programming state based at least in part on applying one or more forward-biased electrical pulses that ramp in a first sequence to the one or more memory cells.
A system, comprising:
- a processor;
- and
- a memory device comprising a plurality of memory cells, the memory device communicatively coupled to the processor and configured to:
- program one or more memory cells of the plurality of memory cells from an intermediate programming state to a set programming state based at least in part on applying one or more forward-biased electrical pulses that ramp in a first sequence to the one or more memory cells.
1 more element
Dependencies are inferred from the claim text.