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US 9,852,785 B2Granted
Memories with metal-ferroelectric-semiconductor (MFS) transistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Der Chih, Yun-Sheng Chen, Chun-Jung Lin
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Abstract
A method includes applying a first voltage to a first source line of a memory, applying a second voltage to a second source line of the memory, turning on an access transistor of a memory cell of the memory, and performing one of a write operation or a read operation on a metal-ferroelectric-semiconductor (MFS) transistor of the memory cell. Memories on which the method is performed are also disclosed.
Claims19
A memory comprising:
- a memory cell including a pair of metal-ferroelectric-semiconductor (MFS) transistors and an access transistor;
- and
- a read-write circuit coupled to the memory cell, and configured to turn on the access transistor and to perform one of a read operation or a write operation on one of the MFS transistors in response to a command,
- wherein the memory cell is configured to perform a read operation on a first one of the MFS transistors when a negative voltage is applied to a gate terminal of a second one of the MFS transistors.
1 more element
A method comprising:
- applying a first voltage to a first source line of a memory;
- applying a second voltage to a second source line of the memory;
- applying the second voltage to a gate terminal of a second metal-ferroelectric-semiconductor (MFS) transistor of a memory cell of the memory;
- turning on an access transistor of the memory cell of the memory;
- performing a write operation on a first metal-ferroelectric-semiconductor (MFS) transistor of the memory cell;
- and
- performing a read operation on a first one of the MFS transistors when a negative voltage is applied to a gate terminal of a second one of the MFS transistors.
4 more elements
A method, comprising:
- applying a first voltage to a first source line of a memory;
- applying a second voltage to a second source line of the memory, wherein the first and second voltages are substantially equal;
- applying a negative voltage to a gate terminal of a second metal-ferroelectric-semiconductor (MFS) transistor of a memory cell of the memory;
- turning on an access transistor of the memory cell;
- and
- performing a read operation on a first metal-ferroelectric-semiconductor (MFS) transistor of the memory cell.
3 more elements
Dependencies are inferred from the claim text.