Method and recording medium of reducing chemoepitaxy directed self-assembled defects

A non-transitory computer-readable recording medium recording a program for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, the program causing a computer to perform:

• detecting a vertical spacing between a first portion of the guiding pattern and a second portion of the guiding pattern;
• inserting an internal dummy between the first portion of the guiding pattern and the second portion of the guiding pattern if the vertical spacing is equal to or greater than a first predetermined distance;
• inserting a first external dummy along an external edge of the guiding pattern in a vertical direction if the vertical spacing is greater than a second predetermined distance;
• determining a first distance from the external edge of the guiding pattern to an edge of the first external dummy adjacent to the external edge;
• and
• inserting an anti-taper structure on the first external dummy if a second distance from the external edge of the guiding pattern to the edge of the first external dummy is greater than the first distance.

A computer system for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, said system comprising:

• a processor;
• and
• a memory, the memory storing instructions to cause the processor to:
• detect a vertical spacing between a first portion of the guiding pattern and a second portion of the guiding pattern;
• insert an internal dummy between the first portion of the guiding pattern and the second portion of the guiding pattern if the vertical spacing is equal to or greater than a first predetermined distance;
• insert a first external dummy along an external edge of the guiding pattern in a vertical direction if the vertical spacing is greater than a second predetermined distance;
• determine a first distance from the external edge of the guiding pattern to an edge of the first external dummy adjacent to the external edge;
• and
• insert an anti-taper structure on the first external dummy if a second distance from the external edge of the guiding pattern to the edge of the first external dummy is greater than the first distance.