Memory device and operating method of memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsJae Don Lee, Choong Hun Lee, Gyu Sang Choi, Min Young Son
Life of this patent
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Abstract
A memory device may include a non-volatile memory and non-volatile RAM. The non-volatile memory may include a data block and a metadata block. Metadata information with respect to the data block may be included in the metadata block. A portion of metadata with respect to the data block or the metadata with respect to the metadata block may be stored in the non-volatile RAM.
Claims14
A memory device, comprising:
- a processor configured to verify that a write command of a non-volatile memory is a sequential write in response to a size of data of the write command being greater than or equal to a threshold, and verify that the write command is a random write in response to the size of the data of the write command being less than the threshold;
- the non-volatile memory including data blocks and a metadata block and configured to store first metadata corresponding to the data blocks in the metadata block;
- and
- a non-volatile RAM configured to read and write in byte units or word units, and store second metadata,
- wherein the non-volatile RAM is configured to store data corresponding to a write command and store map information of the stored data, in response to the write command of the non-volatile memory being verified to be a random write.
A method of operating a memory device including a non-volatile memory and a non-volatile RAM, the method comprising:
- verifying that a write command of the non-volatile memory is a sequential write in response to a size of data of the write command being greater than or equal to a threshold;
- verifying that the write command is a random write in response to the size of the data of the write command being less than the threshold;
- storing data corresponding to the write command and storing map information of the stored data in the non-volatile RAM in response to the write command of the non-volatile memory being verified to be the random write;
- and
- programming data corresponding to the write command in the non-volatile memory in response to the write command being verified to be the sequential write.
A method of operating a memory device including a non-volatile memory and a non-volatile RAM, the method comprising:
- converting a logical block address of an access command of the non-volatile memory into a physical address based on map information stored in the non-volatile RAM;
- accessing page map information stored in a metadata area of the non-volatile memory based on the physical address;
- converting a logical page address of the access command into a physical page address based on the accessed page map information;
- accessing data stored in a data area of the non-volatile memory based on the physical page address;
- and
- assigning the access command to any one of channels of the non-volatile memory based on a remainder after dividing the logical block address or the logical page address of the access command by a number of the channels,
- wherein a value of the remainder determines the assigning of the access command to a specified channel.
A non-transitory computer-readable storage medium storing a program to operate a memory device including a non-volatile memory and a non-volatile RAM, comprising instructions to cause a computer to:
- verify that a write command of the non-volatile memory is a sequential write in response to a size of data of the write command being greater than or equal to a threshold;
- verify that the write command is a random write in response to the size of the data of the write command being less than the threshold;
- store data corresponding to the write command and store map information of the stored data in the non-volatile RAM in response to the write command of the non-volatile memory being verified to be the random write;
- and
- program data corresponding to the write command in the non-volatile memory in response to the write command being the sequential write.
Dependencies are inferred from the claim text.