Two-stage read/write 3D architecture for memory devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuang Ting Chen, Ching-Wei Wu
Life of this patent
Estimating the term…
Loading patent…
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuang Ting Chen, Ching-Wei Wu
Estimating the term…
A memory device includes a first group of memory cells, a second group of memory cells, a third group of memory cells, and a fourth group of memory cells. A control circuit performs a first read/write operation during a first time interval by writing a first data value to the first group while concurrently reading a second data value from the second group. The control circuit performs a second read/write operation during a second time interval, which is after the first time interval, by writing a third data value to the third group while concurrently reading a fourth data value from the fourth group. The first and third data values are collectively made up of N-bits and collectively correspond to an N-bit input data word provided onto input pins of the memory device prior to the first time interval.
A memory device comprising:
A memory device comprising:
A memory device comprising:
Dependencies are inferred from the claim text.