Photosensitive polysiloxane composition and uses thereof
AssigneeChi Mei Corporation
InventorsWei-Jie Huang, Chun-An Shih
Life of this patent
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Abstract
The invention relates to a photosensitive polysiloxane composition and a thin film formed by the aforementioned photosensitive polysiloxane composition. The thin film is a planarization film of a TFT substrate, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. The invention is to provide a photosensitive polysiloxane composition having excellent surface flatness and high tapered angle of a pattern. The photosensitive polysiloxane composition comprises a polysiloxane (A), an o-naphthoquinone diazide sulfonic acid ester (B), an alkali-soluble resin containing a silyl group (C) and a solvent (D).
Claims3
A photosensitive polysiloxane composition comprising:
- a polysiloxane (A);
- an o-naphthoquinone diazide sulfonic acid ester (B);
- an alkali-soluble resin containing a silyl group (C);
- and
- a solvent (D);
- wherein the polysiloxane (A) is copolymerized by a compound represented by Formula (4),
- Si(Ra)W(ORb)4-W Formula (4),
- wherein:
- Ra represents hydrogen, an alkyl group containing 1 to 10 carbon atoms, an alkenyl group containing 2 to 10 carbon atoms, an aryl group containing 6 to 15 carbon atoms, an alkyl group containing an acid anhydride group, an alkyl group containing an epoxy group, or an alkoxy group containing an epoxy group;
- when Ra is plural, each Ra is the same or different;
- at least one of Ra represents the alkyl group containing the acid anhydride group;
- Rb represents hydrogen, an alkyl group containing 1 to 6 carbon atoms, an acyl group containing 1 to 6 carbon atoms, an aryl group containing 6 to 15 carbon atoms;
- when Rb is plural, each Rb is the same or different;
- and
- W represents an integer from 0 to 3.
Dependencies are inferred from the claim text.