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US 9,851,454 B2Granted
Detection devices and methods
AssigneeOhio State Innovation Foundation
InventorLei Cao
Life of this patent
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Abstract
A device for detecting neutrons with gamma discrimination and/or gamma radiation includes a first semiconductor layer, a second semiconductor layer, an electron separator layer between the first semiconductor device and the second semiconductor device, and a gadolinium-containing layer between the first semiconductor layer and the second semiconductor layer.
Claims20
A detection device comprising:
- a first semiconductor device;
- a second semiconductor device;
- an electron separator layer between the first semiconductor device and the second semiconductor device;
- and
- a conversion layer between the first semiconductor device and the second semiconductor device;
- wherein the conversion layer comprises gadolinium;
- wherein the conversion layer has a thickness of from about 20 μm to about 40 μm;
- wherein the electron separator layer comprises a first surface and a second surface;
- and
- wherein the first surface is in physical contact with the conversion layer.
7 more elements
A method for detecting neutrons, comprising:
- providing a detection device comprising:
- a first semiconductor device;
- a second semiconductor device;
- an electron separator layer between the first semiconductor device and the second semiconductor device;
- and
- a conversion layer between the first semiconductor device and the second semiconductor device;
- wherein the conversion layer comprises gadolinium;
- wherein the conversion layer has a thickness of from about 20 μm to about 40 μm;
- wherein the electron separator layer comprises a first surface and a second surface;
- and
- wherein the first surface is in physical contact with the conversion layer;
- applying a first, reverse bias voltage to the first semiconductor device and a second, reverse bias voltage to the second semiconductor device;
- and
- comparing a first signal from the first semiconductor device to a second signal from the second semiconductor device to detect neutron radiation.
11 more elements
A method for detecting gamma radiation, comprising:
- providing a detection device comprising a first semiconductor device and a conversion layer disposed on the semiconductor device, wherein the conversion layer comprises gadolinium;
- applying a reverse bias voltage to the semiconductor device;
- and
- measuring a signal generated by K x-rays to determine the intensity of gamma radiation.
1 more element
Dependencies are inferred from the claim text.