Method for heat treatment of silicon single crystal wafer

A method for a heat treatment of a silicon single crystal wafer in an oxidizing ambient, comprising:

• performing the heat treatment based on a condition determined by a tripartite correlation between a heat treatment temperature during the heat treatment, an oxygen concentration in the silicon single crystal wafer before the heat treatment, and a growth condition of a silicon single crystal from which the silicon single crystal wafer is cut out,
• wherein
• the silicon single crystal wafer is cut out from a silicon single crystal doped with nitrogen, and
• the tripartite correlation is represented by the following relational expression (B-1):
• T≧37.5[Oi]+72.7IvoidB+860 (B-1)
• wherein, “T” is the heat treatment temperature (° C.), [Oi] is the oxygen concentration (ppma-JEIDA) in the silicon single crystal wafer before the heat treatment, and IvoidB is represented by the following formula (B-2):
• IvoidB={(V/G)−(V/G)crt}1/3×{L(1080−1040)/2V}1/2 (B-2)
• wherein, “V” is a growth rate (mm/min), “G” is a temperature gradient near an interface (° C./mm), (V/G)crt is a value of V/G when a defect is nonexistent, L(1080-1040) is a length of a temperature zone of void-defect formation of 1,080° C. to 1,040° C. (mm) when the single crystal is doped with nitrogen.