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US 9,850,594 B2Granted
Thermal diffusion doping of diamond
AssigneeWisconsin Alumni Research Foundation
InventorsZhenqiang Ma, Jung-Hun Seo
Life of this patent
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Abstract
Boron-doped diamond and methods for making it are provided. The doped diamond is made using an ultra-thin film of heavily boron-doped silicon as a dopant carrying material in a low temperature thermal diffusion doping process.
Claims14
A method of making substitutionally boron-doped diamond, the method comprising:
- bonding a flexible, boron-doped, single-crystalline silicon nanomembrane to the surface of a layer of diamond;
- and
- annealing the diamond and the boron-doped, single-crystalline silicon nanomembrane for a time sufficient to allow boron dopant atoms from the boron-doped, single-crystalline silicon nanomembrane to diffuse into the layer of diamond to form a doped region in the diamond.
Dependencies are inferred from the claim text.