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US 9,850,593 B2Granted
Method of making quantum dots
AssigneeSamsung Electronics Co., Ltd.
InventorsWenhao Liu, Craig Breen
Life of this patent
Estimating the term…
Abstract
Quantum dots and methods of making quantum dots are provided.
Claims16
A method for making quantum dots comprising:
- combining one or more highly reactive chalcogenide precursors comprising a secondary phosphine chalcogenide, one or more highly reactive metal precursors comprising a metal carboxylate, a solvent, and a seed stabilizing agent comprising a phosphonic acid at a reaction temperature above about 200° C. to form a reaction mixture where the ratio of metal to chalcogenide is in a range from about 1:1 to about 1:0.5, wherein the solvent and the seed stabilizing agent are not the same, and
- quenching the reaction mixture after nucleation by cooling the reaction mixture to a quenching temperature that is lower than the reaction temperature, resulting in seed quantum dots, and
- adding additional stoichiometric amounts of the highly reactive secondary phosphine chalcogenide precursor comprising a secondary phosphine chalcogenide and the highly reactive metal precursor comprising a metal carboxylate to the quenched reaction mixture including the seed quantum dots under conditions suitable to increase the size of the seed quantum dots to a desired size.
Dependencies are inferred from the claim text.