ALD of metal-containing films using cyclopentadienly compounds
AssigneeASM IP Holding B.V.
InventorsSean T. Barry, Yamile A. M. Wasslen, Antti H. Rahtu
Life of this patent
Estimating the term…
Abstract
Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.
Claims23
An atomic layer deposition process for depositing a metal containing thin film on a substrate in a reaction space comprising one or more deposition cycles comprising:
- contacting the substrate with a pulse of a vapor phase first reactant comprising a volatile zirconium compound having the formula (R1R2R3R4R5Cp)x-ZrR0z—(NR1R2)y;
- contacting the substrate with a pulse of a vapor phase second reactant;
- and
- wherein in the first reactant each of the R1 groups, each of the R2 groups, and each of the R3, R4, R5, and R0 groups is independently selected from hydrogen, and linear and branched C1-C20 alkyl, alkenyl and alkynyl groups which are independently substituted or unsubstituted, and wherein x≧1, y≧1 and z≧0.
A plasma enhanced atomic layer deposition process for producing a multicomponent metal containing thin film on a substrate comprising:
- a first deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor comprising a volatile cyclopentadienyl compound and a first reactant comprising N, C or O,
- wherein the first metal precursor has the formula (R1R2R3R4R5Cp)x-MR0z—(NR1R2)y wherein:
- M is zirconium;
- each of the R1 groups, each of the R2 groups, and each of the R3, R4, R5, and R0 groups is independently selected from hydrogen and linear and branched C1-C20 alkyl, alkenyl and alkynyl groups which are independently substituted or unsubstituted, and
- x≧1, y≧2 land z≧0.
Dependencies are inferred from the claim text.