Forming a low-k dielectric layer with reduced dielectric constant and strengthened mechanical properties
AssigneeApplied Materials, Inc.
InventorsTaewan Kim, Kang Sub Yim, Alexandros T. Demos
Life of this patent
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Abstract
A low-k dielectric porous silicon oxycarbon layer is formed within an integrated circuit. In one embodiment, a porogen and bulk layer containing silicon oxycarbon layer is deposited, the porogens are selectively removed from the formed layer without simultaneously cross-linking the bulk layer, and then the bulk layer material is cross-linked. In other embodiments, multiple silicon oxycarbon sublayers are deposited, porogens from each sub-layer are selectively removed without simultaneously cross-linking the bulk material of the sub-layer, and the sub-layers are cross-linked separately.
Claims18
A method for forming a low-k layer, comprising:
- forming a silicon oxycarbon layer that includes a bulk material and a porogen material;
- simultaneously exposing the formed silicon oxycarbon layer to a first amount of ultraviolet radiation and to a gas that comprises radicals, wherein the exposing the formed silicon oxycarbon layer to a first amount of ultraviolet radiation and to the gas does not substantially cause cross-linking of silicon atoms within the formed silicon oxycarbon layer;
- and
- exposing the formed silicon oxycarbon layer to a second amount of ultraviolet radiation after exposing the formed silicon oxycarbon layer to the gas that comprises radicals, wherein the second amount of ultraviolet radiation substantially causes cross-linking of silicon atoms within the formed silicon oxycarbon layer, and the second amount is greater than the first amount.
A method for forming a low-k layer, comprising:
- forming a first silicon oxycarbon layer that comprises a bulk material and a porogen material;
- exposing the formed first silicon oxycarbon layer to a first gas that comprises radicals;
- forming a second silicon oxycarbon layer that comprises the bulk material and the porogen material on the first silicon oxycarbon layer, wherein the formed second silicon oxycarbon layer is in direct contact with the formed first silicon oxycarbon layer;
- exposing the formed second silicon oxycarbon layer to a second gas that comprises radicals;
- and
- exposing the formed first and second silicon oxycarbon layers to an amount of energy, wherein the amount of energy cures the formed first and second silicon oxycarbon layer.
A method for forming a low-k layer, comprising:
- forming a first silicon oxycarbon layer that comprises a bulk material and a porogen material;
- exposing the formed first silicon oxycarbon layer to a first gas that comprises radicals;
- exposing the formed first silicon oxycarbon layer to an amount of energy after exposing the formed first silicon oxycarbon layer to the radicals, wherein the amount of energy cures the formed first silicon oxycarbon layer,
- forming a second silicon oxycarbon layer that comprises the bulk material and the porogen material on the first silicon oxycarbon layer after exposing the formed first silicon oxycarbon layer to the amount of energy, wherein the formed second silicon oxycarbon layer is in direct contact with the formed first silicon oxycarbon layer;
- exposing the formed second silicon oxycarbon layer to a second gas that comprises radicals;
- and
- exposing the formed second silicon oxycarbon layer to an amount of energy, wherein the amount of energy cures the formed second silicon oxycarbon layer.
Dependencies are inferred from the claim text.