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US 9,850,573 B1Granted
Non-line of sight deposition of erbium based plasma resistant ceramic coating
AssigneeApplied Materials, Inc.
InventorJennifer Y. Sun
Life of this patent
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Abstract
Described herein is a method of depositing a plasma resistant ceramic coating onto a surface of a chamber component using a non-line-of-sight (NLOS) deposition process, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD). The plasma resistant ceramic coating consists of an erbium containing oxide, an erbium containing oxy-fluoride, or an erbium containing fluoride. Also described are chamber components having a plasma resistant ceramic coating of an erbium containing oxide, an erbium containing oxy-fluoride, or an erbium containing fluoride.
Claims19
A method comprising:
- depositing a multi-layer stack onto a surface of a chamber component using a chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process;
- and
- annealing the chamber component comprising the multi-layer stack to convert the multi-layer stack into a plasma resistant ceramic coating, wherein the plasma resistant ceramic coating is selected from a group consisting of:
- an erbium containing fluoride of YxEryFz, where x, y and z are selected such that the erbium containing fluoride of YxEryFz contains over 0 mol % to under 100 mol % YF3 and over 0 mol % to under 100 mol % ErF3, and
- an erbium containing oxy-fluoride YwErxOxFz, where w, x, y and z are selected such that the erbium containing oxy-fluoride of YwErxOxFz contains over 0 mol % to under 100 mol % of three or more of Y2O3, YF3, Er2O3 and ErF3.
2 more elements
A method comprising:
- depositing a multi-layer stack onto a surface of a chamber component using an atomic layer deposition (ALD) process, wherein the multi-layer stack comprises at least one of an erbium containing oxide, an erbium containing oxy-fluoride, or an erbium containing fluoride, and wherein depositing the multi-layer stack comprises:
- depositing a first layer using the ALD process, the first layer consisting essentially of Er2O3 or ErF3;
- depositing a second layer using the ALD process, the second layer consisting of a different material than the first layer, wherein the second layer consists essentially of Er2O3, Al2O3, ErF3, Y2O3 or YF3;
- and
- depositing one or more additional layers using the ALD process, each of the one or more additional layers consisting essentially of one of Er2O3, Al2O3, ErF3, Y2O3 or YF3;
- and
- annealing the chamber component comprising the multi-layer stack, wherein the annealing causes the first layer, the second layer and the one or more additional layers to interdiffuse and transform into a single layer of a plasma resistant ceramic coating, the single layer comprising a solid state phase.
4 more elements
A method comprising:
- depositing a multi-layer stack onto a surface of a chamber component using an atomic layer deposition (ALD) process, wherein the multi-layer stack comprises at least one of an erbium containing oxide, an erbium containing oxy-fluoride, or an erbium containing fluoride, and wherein depositing the multi-layer stack comprises:
- depositing a first layer using the ALD process, the first layer consisting essentially of ErF3;
- depositing a second layer using the ALD process, the second layer consisting essentially of Er2O3, Al2O3, ZrO2, Y2O3 or YF3;
- and
- depositing one or more additional layers using the ALD process, each of the one or more additional layers consisting essentially of one of Er2O3, ZrO2, Al2O3, ErF3, Y2O3 or YF3;
- and
- annealing the chamber component comprising the multi-layer stack, wherein the annealing causes the first layer, the second layer and the one or more additional layers to interdiffuse and transform into a single layer of a plasma resistant coating, the single layer comprising a solid state phase.
4 more elements
Dependencies are inferred from the claim text.