US 9,850,571 B2 · Method for preparing graphene

Abstract

The invention belongs to the technical field of inorganic compounds, and particularly, relates to a method for directly preparing graphene by taking CBr4 as a source material and using methods such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). A method for preparing graphene comprises the following steps: selecting a proper material as a substrate; directly depositing a catalyst and CBr4 on a surface of the substrate; and performing annealing treatment on the sample obtained through deposition. Compared with other technologies, an innovative point of the method in the invention is that the catalyst and CBr4 source can be quantitatively and controllably deposited on any substrate, and the catalyst and CBr4 source react on the surface of the substrate to form the graphene, so that the dependence of the graphene growth on a substrate material can be reduced to a great extent, and different substrate materials can be selected according to different application backgrounds.

Claims8

Dependent claims

A method for preparing graphene, comprising the following steps:

(1) selecting a proper material as a substrate;
(2) directly depositing CBr4 and catalys on a surface of the substrate, the catalyst is Ga, the deposition manner for CBr4 and catalyst is alternatively deposition in any order more than once, in each deposition manner, the total deposition of CBr4 is 3.8E7-3.8E9 molecules/μm2, the total deposition of catalyst is 1.7E7-1.7E9 atoms/m2, and a deposition temperature for the CBr4 and catalyst is between 10° C. and 490° C.;
(3) performing annealing treatment on the sample obtained by step 2 to obtain the graphene.

Dependencies are inferred from the claim text.

Method for preparing graphene

Life of this patent

Method for preparing graphene

Life of this patent

Abstract

Claims8