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AssigneeCabot Microelectronics Corporation
InventorsDmitry Dinega, Sairam Shekhar, Renhe Jia, Daniel Mateja
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The present invention provides chemical mechanical polishing compositions and methods for polishing a substrate comprising silicon dioxide and silicon nitride, which provide selective removal of SiN relative to silicon oxide (e.g., PETEOS) on patterned wafers. In one embodiment, a CMP method comprises abrading a surface of a substrate comprising SiN and silicon oxide with a CMP composition to remove at least some SiN therefrom. The CMP composition comprises, consists essentially of, or consists of a particulate abrasive (e.g., ceria) suspended in an aqueous carrier and containing a cationic polymer bearing pendant quaternized nitrogen-heteroaromatic moieties, wherein the composition has a pH of greater than about 3.
A chemical mechanical polishing (CMP) method for selectively removing silicon nitride relative to silicon oxide from a substrate comprising silicon nitride and silicon oxide, the method comprising abrading a surface of the substrate with a CMP composition to remove at least some silicon nitride therefrom;
A chemical mechanical polishing (CMP) composition suitable for selectively removing silicon nitride relative to silicon oxide from a substrate comprising silicon nitride and silicon oxide;
Dependencies are inferred from the claim text.