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US 9,850,120 B2Granted
Micromechanical component having a diaphragm
AssigneeRobert Bosch GmbH
InventorsUwe Schiller, Volkmar Senz, Jochen Franz, Helmut Grutzeck, Michaela Mitschke
Life of this patent
Estimating the term…
Abstract
Measures are described with the aid of which not only a rupture, but also cracks may be detected in the diaphragm structure of a micromechanical component with the aid of circuit means integrated into the diaphragm structure. At least some circuit elements are integrated for this purpose into the bottom side of the diaphragm, i.e., into a diaphragm area directly adjoining the cavern below the diaphragm.
Claims19
A micromechanical component, comprising:
- at least one diaphragm which extends entirely across a cavern in the component, the component having a layered structure, wherein the diaphragm includes a top side and a bottom side, and wherein the cavern faces the bottom side;
- and
- a plurality of connecting contacts inside the diaphragm, the connecting contacts including at least one pair of connecting contacts separated by an area of the diaphragm extending across the cavern, such that a voltage applied to the pair of connecting contacts generates a current from a first one of the pair of connecting contacts, directly through the separating area, and into a second one of the pair of connecting contacts, wherein the current is indicative of a resistance of the diaphragm such that a change in the resistance caused by a crack extending from the bottom side towards the top side is reflected in the current;
- wherein the component includes a layered structure having a semiconductor substrate, and an epitaxial layer on the semiconductor substrate,
- wherein the diaphragm is implemented in the epitaxial layer,
- wherein the connecting contacts are each implemented in the form of a doped semiconductor area which extend into the epitaxial layer, and wherein the doped area is electrically contacted via a metal contact on a component surface to energize the diaphragm,
- wherein the connecting contacts are between and girded by an insulation doping in the epitaxial layer to electrically decouple the diaphragm from other areas of the component, and
- wherein the connecting contacts have a same doping type as the epitaxial layer, the connecting contacts being doped more strongly than the epitaxial layer.
5 more elements
Dependencies are inferred from the claim text.