Self-aligned wrap-around contacts for nanosheet devices

A method of forming a wrap-around contact on a nanosheet transistor, the method comprising:

• forming an etch-stop layer over a continuous outer surface of a raised source/drain (S/D) region of the nanosheet transistor;
• forming a sacrificial layer over the etch-stop layer, the etch-stop layer including a different material than the sacrificial layer;
• depositing a dielectric layer over the sacrificial layer;
• removing an upper portion of the dielectric layer to expose a portion of the sacrificial layer;
• removing the sacrificial layer selective to the etch-stop layer;
• and
• depositing a conductor in the removed upper portion of the dielectric layer to form a wrap-around contact and a second contact.

An apparatus comprising:

• a nanosheet stack disposed on a substrate;
• a metal gate disposed on the nanosheet stack;
• a raised source/drain (S/D) region disposed on the substrate and adjacent to the nanosheet stack such that the nanosheets extend between the source/drain region;
• a silicon etch-stop layer disposed on the raised S/D region;
• a wrap-around contact wrapped around the silicon etch-stop layer;
• and
• a second contact disposed on the wrap-around contact, wherein a widest portion of the second contact is narrower than a widest portion of the wrap-around contact.