Stress and temperature compensated hall sensor, and method

An integrated semiconductor device for measuring a magnetic field strength, comprising:

• at least one Hall element configured for providing a Hall signal indicative of the magnetic field strength to be measured;
• a first lateral isotropic sensor having a first stress sensitivity and a first temperature sensitivity and configured for providing a first sensor signal;
• a second lateral isotropic sensor having a second stress sensitivity, and having a second temperature sensitivity and configured for providing a second sensor signal;
• wherein the first temperature sensitivity is different from the second temperature sensitivity or the first stress sensitivity is different from the second stress sensitivity or both;
• digitization means arranged for digitizing the Hall signal and the first sensor signal and the second sensor signal so as to obtain three digital values;
• calculation means configured for solving a set of only two simultaneous polynomial equations with predefined coefficients in only two variables in order to obtain a stress-value and a temperature-value,
• and configured for calculating a stress-compensated and temperature-compensated Hall value using a predefined correction formula in only two parameters being said calculated stress value and said calculated temperature value.