Method of manufacturing silicon carbide substrate

A method of manufacturing a silicon carbide substrate, comprising the steps of:

• preparing a crystal of single crystal silicon carbide having a cleavage direction that appears every 30 degrees in an orthogonal projection on a {0001} plane;
• setting said crystal on a support base such that a part of a side surface of said crystal is supported by said support base;
• and
• obtaining a substrate by cutting said crystal while running a wire along a direction of a diameter of said crystal and moving said wire in a direction perpendicular to a running direction of said wire, wherein
• in said step of obtaining a substrate, the cutting of said crystal proceeds in a direction in which an angle formed with respect to a <11-20> direction or a <1-100> direction of said crystal is 15°±5° in the orthogonal projection on the {0001} plane, and
• in said step of obtaining a substrate, said crystal is cut such that a ratio of a diameter to a thickness of said substrate is not smaller than 100.