Stacked die power converter

A stacked die power converter package, comprising:

• a lead frame including a die pad and a plurality of package pins;
• a first die including a first power transistor switch (first power transistor) attached to the die pad;
• a first metal clip attached to one side of the first die, the first metal clip coupled to at least one of the plurality of package pins;
• a second die including a second power transistor switch (second power transistor) attached to another side on the first metal clip;
• wherein said first power transistor comprises a low side power transistor (LS power transistor) and said second power transistor comprises a high side power transistor (HS power transistor), and said power converter package comprises a buck converter, and wherein said HS power transistor comprises a second lateral transistor on said second die, said second die including at least one through silicon via (TSV) that couples a non-control node of said second lateral transistor to said first metal clip, and wherein said LS power transistor comprises a first lateral transistor on said first die, said first die including at least one TSV that couples a non-control node of said LS power transistor to said die pad;
• a second metal clip attached to one side of the second die, the first metal clip coupled to at least one of the plurality of package pins;
• a non-conductive layer applied to another side of the second metal clip, wherein the thickness and composition of the non-conductive layer is configured to provide a greater than 30V breakdown voltage of the non-conductive layer;
• and
• a controller comprising a controller die is attached to the non-conductive layer on the second metal clip wherein the controller is coupled to both a first control node of the first power transistor and a second control node of the second power transistor.