All-silicon electrode capacitive transducer on a glass substrate
AssigneeHoneywell International Inc.
InventorsBurgess R. Johnson, Ryan Supino
Life of this patent
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AssigneeHoneywell International Inc.
InventorsBurgess R. Johnson, Ryan Supino
Estimating the term…
An all-silicon electrode capacitive transducer comprising: a movable silicon microstructure coupled to a glass substrate, the movable silicon microstructure having a movable silicon electrode, the glass substrate having a top surface and at least one recess, the movable silicon electrode having a first flat surface parallel to a plane of the top surface of the glass substrate, the movable silicon electrode having a first electronic work function; and a stationary silicon electrode coupled to a glass substrate, the stationary silicon electrode located adjacent to the movable silicon electrode, the stationary silicon electrode configured to sense or actuate displacement of the movable silicon microstructure, wherein the stationary silicon electrode has a second flat surface parallel to the first flat surface, the stationary silicon electrode having a second electronic work function equal to the first electronic work function.
A capacitive transducer comprising:
A system for a capacitive transducer, comprising:
Dependencies are inferred from the claim text.