Semiconductor power package and method of manufacturing the same

A semiconductor power package, comprising:

• an encapsulation embedding a power semiconductor chip, the encapsulation forming a housing of the semiconductor power package;
• and
• a layer of a covering material extending over at least a part of an outer main surface of the encapsulation, the covering material having an elastic modulus less than an elastic modulus of a material of the encapsulation.

A semiconductor power package, comprising:

• a mold material encapsulation embedding a power semiconductor chip, the mold material encapsulation forming a housing of the semiconductor power package, wherein a mold material of the mold material encapsulation comprises a rubber-based material.

A semiconductor power package, comprising:

• an encapsulation embedding a power semiconductor chip, the encapsulation forming a housing of the semiconductor power package;
• and
• a layer of a covering material extending over at least a part of an outer main surface of the encapsulation, the covering material having a thermal conductivity greater than a thermal conductivity of the material of the encapsulation.

A semiconductor power package, comprising:

• an encapsulation embedding a power semiconductor chip, the encapsulation forming a housing of the semiconductor power package;
• and
• a layer of a covering material extending over at least a part of an outer main surface of the encapsulation, the covering material having a temperature stability greater than a temperature stability of the pre-molded chip housing.