Structure and formation method of semiconductor device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPing-Yin Liu, Xin-Hua Huang, Yeong-Jyh Lin, Jung-Huei Peng
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Abstract
Structures and formation methods of a semiconductor device structure are provided. A semiconductor device structure includes a semiconductor substrate including a cavity and a movable feature in the cavity. The semiconductor device structure also includes a cap substrate bonded to the semiconductor substrate to seal the cavity. There is an interface between the cap substrate and the semiconductor substrate. The semiconductor device structure further includes a sealing feature embedded in the semiconductor substrate and surrounding the cavity. The sealing feature extends across the interface and penetrates through the cap substrate.
Claims20
A method for forming a semiconductor device structure, comprising:
- providing a semiconductor substrate having a first surface;
- partially removing the semiconductor substrate from the first surface to form a cavity and a first trench in the semiconductor substrate and a movable feature in the cavity;
- providing a cap substrate having a second surface and a third surface opposite to the second surface;
- partially removing the substrate from the second surface to form a second trench in the cap substrate;
- bonding the second surface of the cap substrate to the first surface of the semiconductor substrate so that the cavity is sealed by the cap substrate, wherein the first trench and the second trench are connected with each other and form a chamber;
- and
- forming a sealing feature over the third surface of the cap substrate to fill the chamber.
A method for forming a semiconductor device structure, comprising:
- partially removing a substrate to form a cavity and a first trench in the substrate and a movable feature in the cavity;
- partially removing a cap substrate to form a second trench in the cap substrate;
- bonding the cap substrate having the second trench and the substrate having the first trench together so that the cavity is sealed by the cap substrate, wherein the first trench and the second trench communicate with each other and form a chamber;
- partially removing the cap substrate to expose the chamber;
- and
- filling the chamber with a sealing feature, wherein the sealing feature penetrates through the cap substrate and extends across an interface between the cap substrate and the substrate.
A method for forming a semiconductor device structure, comprising:
- bonding a first substrate to a second substrate;
- patterning a first substrate such that the first substrate has a first trench and a first cavity and comprises movable features suspended in the first cavity, wherein the second substrate has a second cavity connected with the first cavity;
- partially removing a cap substrate to form a second trench in the cap substrate;
- bonding the cap substrate having the second trench and the first substrate having the first trench together to seal the first cavity and the second cavity;
- and
- filling the first trench and the second trench with a sealing feature, wherein the sealing feature extends in the cap substrate and is anchored into the first substrate.
Dependencies are inferred from the claim text.